Effect of annealing and applied bias on barrier shape in CoFe/MgO/CoFe tunnel junctions
نویسندگان
چکیده
منابع مشابه
Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage
Co40Fe40B20 /MgO single and double barrier magnetic tunnel junctions MTJs were grown using target-facing-target sputtering for MgO barriers and conventional dc magnetron sputtering for Co40Fe40B20 ferromagnetic electrodes. Large tunnel magnetoresistance TMR ratios, 230% for single barrier MTJs and 120% for the double barrier MTJs, were obtained after postdeposition annealing in a field of 800 m...
متن کاملAnnealing effect on tunneling magnetoresistance in MgO-based magnetic tunnel junctions with FeMn exchange-bias layer
MgO-based magnetic tunnel junctions were fabricated, with a thin pinned CoFeB layer in the unbalanced synthetic antiferromagnet part of the stack FeMn/CoFe/Ru/CoFeB. Inverted and normal tunneling magnetoresistance (TMR) values occur at low and high annealing temperatures (Ta), respectively. The TMR ratio remains inverted up to Ta = 300 °C and it becomes normal around Ta = 350 °C. The exchange b...
متن کاملEvolution of barrier-resistance noise in CoFeB/MgO/CoFeB tunnel junctions during annealing
The low-frequency resistance noise in sputtered-deposited magnetic tunnel junctions with MgO barriers has been measured as a function of annealing time at different annealing temperatures. The noise has a 1 / f spectrum and it is quantified by a Hooge-like parameter given in units of m2. Unannealed devices have the highest noise levels and their parameters exhibit a pronounced dependence on the...
متن کاملNoise in MgO barrier magnetic tunnel junctions with CoFeB electrodes: Influence of annealing temperature
Low frequency noise has been measured in magnetic tunnel junctions with MgO barriers and magnetoresistance values up to 235%. The authors investigated the noise for different degrees of crystallization and CoFeB/MgO interface quality depending on the annealing temperature. The authors report an extremely low 1/ f noise, compared to magnetic junctions with Al2O3 barriers. The origin of the low f...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2011
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.83.165413